(Hong Kong)
Product Summary
The 2N1671B is a PN BAR-TYPE silicon unijunction transistor. It is designed for medium-power switching, oscillator and pulse timing circuits. Package outline is similar to TO-5 except.
Parametrics
2N1671B absolute maximum ratings: (1)Base 1 – Emitter Reverse Voltage: 30 V; (2)Base 2 – Emitter Reverse Voltage: 30 V; (3)Interbase Voltage: 35 V; (4)RMS Emitter Current: 50 mA; (5)Emitter Peak Current: 2A; (6)Total Power Dissipation: 450 mW; (7)Maximum Junction: 150 ℃; (8)Storage Temperature Range: -55 to +150 ℃.
Features
2N1671B features: (1)Highly Stable Negative Resistance and Firing Voltage; (2)Low Firing Current; (3)High Pulse Curent Capabilities; (4)Simplified Circuit Design.
Diagrams
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 2N1613 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Gen Pur SS |
Data Sheet |
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2N1616 |
Other |
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Negotiable |
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2N1617 |
Other |
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Negotiable |
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2N1671 |
Other |
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Data Sheet |
Negotiable |
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