Product Summary

The 2SK2837 is a TOSHIBA Field Effect Transistor Silicon N Channel MOS Type.

Parametrics

2SK2837 absolute maximum ratings: (1)Drain.source voltage VDSS: 500 V; (2)Drain-gate voltage (RGS = 20 kΩ) VDGR: 500 V; (3)Gate-source voltage VGSS: ±30 V; (4)Drain power dissipation (Tc = 25℃) PD: 150 W; (5)Single pulse avalanche energy EAS: 960 mJ; (6)Avalanche current IAR: 20 A; (7)Repetitive avalanche energy EAR: 15 mJ; (8)Channel temperature Tch: 150 ℃; (9)Storage temperature range Tstg: -55 to 150 ℃.

Features

2SK2837 features: (1)Low drain-source ON resistance : RDS (ON) = 0.21 Ω (typ.); (2)High forward transfer admittance : |Yfs| = 17 S (typ.); (3)Low leakage current : IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

package diagram 2SK2837

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SK2837
2SK2837

MOSFET N-CH 500V 20A TO-3PN
Data Sheet
Negotiable 
2SK2837(Q,T)
2SK2837(Q,T)

MOSFET N-CH 500V 20A TO-3PN
Data Sheet
Negotiable