(Hong Kong)
Product Summary
The EP1C12F324C8N is a field programmable gate array. The device is based on a 1.5V, 0.13μm, all-layer copper SRAM process, with densities up to 20,060 logic elements (LEs) and up to 288 Kbits of RAM. With features like phaselocked loops (PLLs) for clocking and a dedicated double data rate (DDR) interface to meet DDR SDRAM and fast cycle RAM (FCRAM) memory requirements, the EP1C12F324C8N is a cost-effective solution for data-path applications. The EP1C12F324C8N supports various I/O standards, including LVDS at data rates up to 311 megabits per second (Mbps) and 66-MHz, 32-bit peripheral component interconnect (PCI), for interfacing with and supporting ASSP and ASIC devices.
Parametrics
EP1C12F324C8N absolute maximum ratings: (1)VCCINT, Supply voltage With respect to ground: –0.5 to 2.4 V; (2)VCCIO: –0.5 to 4.6 V; (3)VI, DC input voltage: –0.5 to 4.6 V; (4)IOUT, DC output current, per pin: –25 to 25 mA; (5)TSTG, Storage temperature No bias: –65 to 150℃; (6)TAMB, Ambient temperature Under bias: –65 to 135℃; (7)TJ, Junction temperature BGA packages under bias: 135℃ max.
Features
EP1C12F324C8N features: (1)2,910 to 20,060 LEs; (2)Up to 294,912 RAM bits (36,864 bytes); (3)Supports configuration through low-cost serial configuration device; (4)Support for LVTTL, LVCMOS, SSTL-2, and SSTL-3 I/O standards; (5)Support for 66-MHz, 32-bit PCI standard; (6)Low speed (311 Mbps) LVDS I/O support; (7)Up to two PLLs per device provide clock multiplication and phase shifting; (8)Up to eight global clock lines with six clock resources available per logic array block (LAB) row; (9)Support for external memory, including DDR SDRAM (133MHz), FCRAM, and single data rate (SDR) SDRAM; (10)Support for multiple intellectual property (IP) cores.
Diagrams
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 EP1C12F324C8N |
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IC CYCLONE FPGA 12K LE 324-FBGA |
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EP1C12 |
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