(Hong Kong)
Product Summary
The FM24C256-G is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C256-G performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.
Parametrics
FM24C256-G absolute maximum ratings: (1)VDD Voltage on VDD with respect to VSS: -1.0V to +7.0V; (2)VIN Voltage on any signal pin with respect to VSS: -1.0V to +7.0V and VIN < VDD+1.0V; (3)TSTG Storage Temperature: -55℃ to + 125℃; (4)TLEAD Lead temperature (Soldering, 10 seconds): 300℃; (5)VESD Electrostatic Discharge Voltage. Human Body Model (JEDEC Std JESD22-A114-B): 4kV; (6) Machine Model (JEDEC Std JESD22-A115-A): 400V; (7)Package Moisture Sensitivity Level: MSL-1.
Features
FM24C256-G features: (1)256Kbit Ferroelectric Nonvolatile RAM; (2)Organized as 32,768 x 8 bits; (3)High Endurance 10 Billion (1010) Read/Writes; (4)45 year Data Retention; (5)NoDelay Writes; (6)Advanced High-Reliability Ferroelectric Process; (7)Fast Two-wire Serial Interface; (8)Low Power Operation; (9)Industry Standard Configuration.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM24C256-G |
Ramtron |
F-RAM 256K (32Kx8) 5V |
Data Sheet |
Negotiable |
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 |
FM24C256-G/TR |
Other |
|
Data Sheet |
Negotiable |
|
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FM24C256-GTR |
Ramtron |
F-RAM 256K (32Kx8) 5V |
Data Sheet |
Negotiable |
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