(Hong Kong)
Product Summary
The FQD2N80TM is a N-Channel enhancement mode power field effect transistor. The FQD2N80TM is produced using proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQD2N80TM is well suited for high efficiency switch mode power supply.
Parametrics
FQD2N80TM absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 800 V; (2)ID, Drain Current - Continuous (TC = 25℃): 1.8 A; Continuous (TC = 100℃): 1.14 A; (3)IDM, Drain Current - Pulsed: 7.2 A; (4)VGSS, Gate-Source Voltage: ± 30 V; (5)EAS, Single Pulsed Avalanche Energy: 180 mJ; (6)IAR, Avalanche Current: 1.8 A; (7)EAR, Repetitive Avalanche Energy: 5.0 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.0 V/ns; (9)PD, Power Dissipation (TA = 25℃): 2.5 W; (10)Power Dissipation (TC = 25℃): 50 W; Derate above 25℃: 0.4 W/℃; (11)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (12)TL, Maximum lead temperature for soldering purposes, 1/8 inch from case for 5 seconds: 300℃.
Features
FQD2N80TM features: (1)1.8A, 800V, RDS(on) = 6.3Ω@VGS = 10 V; (2)Low gate charge ( typical 12 nC); (3)Low Crss ( typical 5.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQD2N80TM |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
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FQD2N80TM_WS |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
Negotiable |
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