Product Summary

The HN58C65FPI-25T is an electrically erasable and programmable ROM organized as 8192-word × 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. The HN58C65FPI-25T also has a 32-byte page programming function to make its erase and write operations faster.

Parametrics

HN58C65FPI-25T absolute maximum ratings: (1)Supply voltage, VCC: –0.6 to +7.0 V; (2)Input voltage, Vin: –0.5 to +7.0 V; (3)Operating temperature range, Topr: 0 to +70℃; (4)Storage temperature range, Tstg: –55 to +125℃.

Features

HN58C65FPI-25T features: (1)Single 5 V Supply; (2)On chip latches: address, data, CE, OE, WE; (3)Automatic byte write: 10 ms max; (4)Automatic page write (32 byte): 10 ms max; (5)Fast access time: 250 ns max; (6)Low power dissipation: 20 mW/MHz typ (Active) 2.0 mW typ (Standby); (7)Data polling and Ready/Busy; (8)Data protection circuity on power on/power off; (9)Conforms to JEDEC byte-wide standard; (10)Reliable CMOS with MNOS cell technology; (11)105 erase/write cycles (in page mode); (12)10 year data retention.

Diagrams

HN58C1001
HN58C1001

Other


Data Sheet

Negotiable 
HN58C256
HN58C256

Other


Data Sheet

Negotiable 
HN58C256A
HN58C256A

Other


Data Sheet

Negotiable 
HN58C257
HN58C257

Other


Data Sheet

Negotiable 
HN58C257A
HN58C257A

Other


Data Sheet

Negotiable 
HN58C65
HN58C65

Other


Data Sheet

Negotiable