Product Summary
The HN58C65FPI-25T is an electrically erasable and programmable ROM organized as 8192-word × 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. The HN58C65FPI-25T also has a 32-byte page programming function to make its erase and write operations faster.
Parametrics
HN58C65FPI-25T absolute maximum ratings: (1)Supply voltage, VCC: –0.6 to +7.0 V; (2)Input voltage, Vin: –0.5 to +7.0 V; (3)Operating temperature range, Topr: 0 to +70℃; (4)Storage temperature range, Tstg: –55 to +125℃.
Features
HN58C65FPI-25T features: (1)Single 5 V Supply; (2)On chip latches: address, data, CE, OE, WE; (3)Automatic byte write: 10 ms max; (4)Automatic page write (32 byte): 10 ms max; (5)Fast access time: 250 ns max; (6)Low power dissipation: 20 mW/MHz typ (Active) 2.0 mW typ (Standby); (7)Data polling and Ready/Busy; (8)Data protection circuity on power on/power off; (9)Conforms to JEDEC byte-wide standard; (10)Reliable CMOS with MNOS cell technology; (11)105 erase/write cycles (in page mode); (12)10 year data retention.
Diagrams
HN58C1001 |
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Negotiable |
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HN58C256 |
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HN58C256A |
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Negotiable |
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HN58C257 |
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Negotiable |
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HN58C257A |
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Negotiable |
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HN58C65 |
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Negotiable |
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