Product Summary

The IRFU9024N is a power MOSFET. The IRFU9024N utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFU9024N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFU9024N is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The device is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRFU9024N absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ -10V: -11A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ -10V: -8 A; (3)IDM, Pulsed Drain Current: -44A; (4)PD @TC = 25℃, Power Dissipation: 38 W; (5)Linear Derating Factor: 0.30 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 62 mJ; (8)IAR Avalanche Current: -6.6 A; (9)EAR Repetitive Avalanche Energy: 3.8 mJ; (10)dv/dt Peak Diode Recovery dv/dt: -10 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 150℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case).

Features

IRFU9024N features: (1)Ultra Low On-Resistance; (2)P-Channel; (3)Surface Mount; (4)Straight Lead; (5)Advanced Process Technology; (6)Fast Switching; (7)Fully Avalanche Rated.

Diagrams

IRFU9024N circuit

Image Part No Mfg Description Data Sheet Download Pricing
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IRFU9024N
IRFU9024N


MOSFET P-CH 55V 11A I-PAK

Data Sheet

0-600: $0.46
IRFU9024NPBF
IRFU9024NPBF

International Rectifier

MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC

Data Sheet

0-1: $0.65
1-25: $0.38
25-100: $0.23
100-250: $0.22