Product Summary

The K6T0808C1D-GB70 is a CMOS SRAM. It supports various operating temperature ranges and has various package types for user flexibility of system design. The K6T0808C1D-GB70 also supports low data retention voltage for battery backup operation with low data retention current.

Parametrics

K6T0808C1D-GB70 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN,VOUT: -0.5 to 7.0 V; (2)Voltage on Vcc supply relative to Vss VCC: -0.5 to 7.0 V; (3)Power Dissipation PD: 1.0 W; (4)Storage temperature TSTG: -65 to 150℃; (5)Soldering temperature and time TSOLDER: 260°C, 10sec (Lead Only).

Features

K6T0808C1D-GB70 features: (1)Process Technology : TFT; (2)Organization : 32Kx8; (3)Power Supply Voltage : 4.5~5.5V; (4)Low Data Retention Voltage : 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type : 28-DIP-600B, 28-SOP-450 28-TSOP1-0813.4 F/R.

Diagrams

K6T0808C1D
K6T0808C1D
Other

Data Sheet
Negotiable