Product Summary
The PMD20K200 is a three-terminal NPN switching Darlington power transistor. The device is monolithic epitaxial base structures with built-in base to emitter shunt resistors. The PMD20K200 is designed to swtich at frequencies up to 30KHz. The PMD20K200 is CVD glass passivated to increase reliability and provide reduced high-temperature reverse leakage current. Internal diode protection (D1) of the Darlington configuration is built into the structure to limit the device power dissipation during negative overshoot. Didoe D2 is built-in to reduce device turn-off time when negative base drive is used.
Parametrics
PMD20K200 absolute maximum ratings: (1)collector emitter voltage, VCEO: 200Vdc; (2)collector base voltage, VCBO: 200Vdc; (3)emitter base voltage, VEBO: 2Vdc; (4)collector current, continuous IC: 14Adc; peak: 20Adc; (5)base current, IB: 0.5Adc; (6)thermal resistance, θJC: 1.0℃/Watt; (7)total internal power dissipation 2 Tc=0℃, PD: 150Watts; (8)operating junction and storage temperature, Tj: -65 to 150℃; Tstg: -65 to 200℃.
Features
PMD20K200 features: (1)electrical specifications guaranteed for operating junction temperature range of 0 to 150℃; (2)guaranteed and 100% tested for ISB (secondary breakdown current) insuring maximum performance at high energy levels; (3)built-in speed up diode for fast turn-off with negative base drive; (4)low thermal resistance for more useable power and lower operating temperature; (5)hermetically sealed.
Diagrams
PMD2001D T/R |
NXP Semiconductors |
Power Driver ICs MOSFET DRIVER TAPE 7 |
Data Sheet |
Negotiable |
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PMD2001D,115 |
NXP Semiconductors |
Power Driver ICs MOSFET DRIVER TAPE 7 |
Data Sheet |
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PMD2406PKB1-A.(2).GN |
FAN 24VDC 60X20MM 27.5CFM |
Data Sheet |
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PMD2406PMB1-A.(2).GN |
FAN 24VDC 60X38MM 56.5CFM |
Data Sheet |
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PMD2406PTB1-A.(2).U.GN |
FAN 24VDC 60X25MM 36.0CFM |
Data Sheet |
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PMD2406PTVX-A U.GN |
FAN 24VDC 60X25MM 36.0CFM |
Data Sheet |
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