(Hong Kong)
Product Summary
The QF20AA60 is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.
Parametrics
QF20AA60 absolute maixmum ratings: (1)VCBO Collector Base Voltage: 400V; (2)VCEX Collector Emitter Voltage at VBE=-2V: 400V; (3)VEBO Emitter-Base Voltage: 10 V; (4)IC Collector Current: 20A; (5)IC Reverse Collector Current: 20 A; (6)IB Base Current: 2 A; (7)PT Total power dissipation: 160 W; (8)Tj Junction Temperature: -40 to 150℃; (9)Tstg Storage Temperature: -40 to 125℃; (10)VISO Isolation Voltage: 2500 V; (11)Mounting Torque: 2.7 N m; (12)Mass Typical Value: 95 g.
Features
QF20AA60 features: (1)IC=20A, VCEX= 400/600V; (2)Low saturation voltage for higher efficiency; (3)High DC current gain hFE; (4)Isolated mounting base; (5)VEBO 10V for faster switching speed.
Diagrams
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QF20AA40 |
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QF20AA60 |
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