Product Summary

The STW15NB50 is a MOSFET. The device uses the latest high voltage MESH OVERLAY process. The STW15NB50 has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. The applications of the STW15NB50 include high current, high speed switching, switch mode power supplies (smps), dc-ac converters for welding equipmentand uninterruptible power supplies and motor drive.

Parametrics

STW15NB50 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 500 V; (2)VDGR, Drain- gate Voltage (RGS = 20 kW): 500 V; (3)VGS, Gate-source Voltage: ±30 V; (4)ID, Drain Current (continuous) at Tc = 25℃: 14.6A; (5)ID, Drain Current (continuous) at Tc = 100℃: 9.2A; (6)IDM, Drain Current (pulsed): 58.4A; (7)Ptot, Total Dissipation at Tc = 25℃: 190W; (8)Derating Factor: 0.64W/℃; (9)dv/dt, Peak Diode Recovery voltage slope: 4 V/ns; (10)VISO, Insulat ion Withstand Voltage (DC): 4000 V; (11)Tstg, Storage Temperature: -65 to 150℃; (12)Tj Max. Operating Junction Temperature: 150℃.

Features

STW15NB50 features: (1)typical RDS(on) = 0.33 W; (2)extremely high dv/dt capability; (3)± 30V gate to source voltage rating; (4)100% avalanche tested; (5)very low intrinsic capacitances; (6)gate charge minimized.

Diagrams

STW15NB50 internal schematic diagram

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