Product Summary

The SPP20N60C3 is a Cool MOS Power Transistor.

Parametrics

SPP20N60C3 absolute maximum ratings: (1)Continuous drain current, ID: 20.7A; (2)Pulsed drain current, tp limited by Tjmax, ID puls: 62.1A; (3)Avalanche energy, single pulse ID=10A, VDD=50V, EAS: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2); (5)ID=20A, VDD=50V; (6)EAR 1 1; (7)Avalanche current, repetitive tAR limited by Tjmax, IAR: 20 A; (8)Gate source voltage static, VGS: ±20 V; (9)Gate source voltage AC (f >1Hz), VGS: ±30V; (10)Power dissipation, TC = 25℃, Ptot: 208W; (11)Operating and storage temperature, Tj , Tstg: -55 to +150℃.

Features

SPP20N60C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).

Diagrams

SPP20N60C3 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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SPP20N60C3
SPP20N60C3

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Data Sheet

0-1: $2.43
1-10: $2.14
10-100: $1.78
100-250: $1.21
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SPP20N60C3
SPP20N60C3

Infineon Technologies

MOSFET COOL MOS N-CH 650V

Data Sheet

0-1: $2.43
1-10: $2.14
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8000-20000: $0.10
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Data Sheet

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2500-5000: $0.11
5000-10000: $0.10
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Data Sheet

0-1: $0.40
1-4000: $0.10
4000-8000: $0.10
8000-20000: $0.09